Mixed mode output buffer circuit for CMOSIC

ABSTRACT

This invention provides circuits which provide stable internally derived voltages for mixed mode large scale integrated circuits having SRAM, DRAM, and the like. The circuits use a summation of threshold voltages of metal oxide semiconductor field effect transistors to clamp voltages and a level detection circuit to compensate for variation in the primary supply voltage. A load detection and feedback circuit using a parasitic bipolar transistor provides voltage stability over a wide range of loading conditions.

BACKGROUND OF THE INVENTION

1. Field of the Invention

This invention relates to circuits which provide stable internallyderived voltages for integrated circuits. The internally derivedvoltages are stable over a wide range of primary supply voltage andloading conditions.

2. Description of the Related Art

In integrated circuit applications having mixed modes such as SRAMcircuits, DRAM circuits, TTL circuits and the like a number of supplyvoltages are needed within the integrated circuit element. Thisinvention provides a stable internal voltage of 4.3 volts and a stableoutput voltage of 3.3 volts using a primary supply voltage of betweenabout 4.0 volts and 6.0 volts. A load detection and feedback circuitprovides stability of these voltages over a wide range of loadingconditions. We do not know of other art providing these stableinternally derived voltages.

SUMMARY OF THE INVENTION

In many cases of large scale integrated circuit design a number ofsupply voltage levels are required and some of them must be internallyderived within the integrated circuit chip. The internally derivedvoltages must be at the proper level and must be stable over a widerange of loading conditions.

It is a principle object of this invention to provide an internalvoltage clamping circuit which has an internal node with a stablevoltage over a wide range of primary supply voltage.

It is another principle object of this invention to provide an outputvoltage clamping circuit which has an output node with a stable voltageover a wide range of primary supply voltage.

It is still another principle objective of this invention to provide aload detection and feedback circuit to provide a stable output voltageover a wide range of loading conditions.

It is still another principle objective of this invention to provide anoutput buffer circuit which combines the internal voltage clampingcircuit, the output voltage clamping circuit, and the load detection andfeedback circuit to provide a stable output voltage over a wide range ofprimary supply voltage and loading conditions.

These objectives are achieved by using the sum of threshold voltages ofa number of metal oxide semiconductor field effect transistors connectedin series to form a voltage clamp. A voltage detection circuit is usedto adjust for variations in the primary voltage supply. A feedbackcircuit using an NPN bipolar transistor is used to provide a stableoutput voltage over a wide range of loading conditions.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1A is a diagram of a conventional buffer circuit comprising twoinput OR-INVERT gates driving an output circuit of two N channel metaloxide semiconductor field effect transistors.

FIG. 1B is a block diagram of the mixed mode output buffer circuit ofthis invention comprising two input OR-INVERT gates, an internal voltageclamping circuit, an output voltage clamping circuit, and a loaddetection and feedback circuit.

FIG. 2 is a schematic diagram of the internal voltage clamping circuit.

FIG. 3 is a schematic diagram of the output voltage clamping circuit.

FIG. 4 is a schematic diagram of the load detection and feedbackcircuit.

FIG. 5 is a schematic diagram of the output buffer circuit.

DESCRIPTION OF THE PREFERRED EMBODIMENTS

Refer now to FIGS. 1A and 1B, there is shown a conventional outputbuffer circuit, FIG. 1A, and an embodiment of the mixed mode outputbuffer circuit of this invention, FIG. 1B. The conventional outputbuffer circuit, shown in FIG. 1A, has a first output N channel metaloxide semiconductor field effect transistor, NMOS-FET, 58 driven by afirst OR-INVERT, or NOR, circuit, or gate, 8, and a second outputNMOS-FET 59 driven by a second NOR circuit 12. The first NOR circuit 8has a first input 91, second input 93, and an output. The second NORcircuit 12 has a first input 92, second input 93, and an output. Theoutput of the first NOR circuit 8 is connected to a first node 80 and tothe gate of the first output NMOS-FET 58. The output of the second NORcircuit 12 is connected to the gate of the second output NMOS-FET 59.The drain of the first output NMOS-FET 58 is connected to the V_(cc)voltage supply of between about 4.0 volts and 6.0 volts. The source ofthe first output NMOS-FET 58 is connected to the drain of the secondoutput NMOS-FET 59 and to the output voltage node 81. The source of thesecond output NMOS-FET 59 is connected to the ground node 95. In theconventional output buffer circuit fluctuations in the V_(cc) supplyvoltage and variations in circuit loading can cause excessive variationsin the voltage at the output voltage node 81.

An embodiment of the mixed mode output buffer circuit of this inventionis shown in FIG. 1B. This circuit has a first output N channel metaloxide semiconductor field effect transistor, NMOS-FET, 58 driven by amodified NOR circuit 9, and a second output NMOS-FET 59 driven by asecond NOR circuit 12. The modified NOR circuit 9 has a first input 91,second input 93, and an output. The second NOR circuit 12 has a firstinput 92, second input 93, and an output. The output of the modified NORcircuit 9 is connected to a first node 80 and to the gate of the firstoutput NMOS-FET 58. The output of the second NOR circuit 12 is connectedto the gate of the second output NMOS-FET 59. The drain of the firstoutput NMOS-FET 58 is connected to the V_(cc) voltage supply of betweenabout 4.0 volts and 6.0 volts. The source of the first output NMOS-FET58 is connected to the drain of the second output NMOS-FET 59 and to theoutput voltage node 81. The source of the second output NMOS-FET 59 isconnected to the ground node 95. An internal voltage clamping circuit 2is connected to the first node 80, an output voltage level clampingcircuit 3 is connected to the internal voltage clamping circuit 2 and tothe output voltage node 81, and a output load detection and feedbackcircuit 4 is connected to the output voltage level clamping circuit 3and to the output voltage node 81.

The internal voltage clamping circuit 2 clamps the voltage at the firstnode 80 at about 4.3 volts when the voltage at the output node 81 is atthe up level and the V_(cc) supply voltage is between about 4.0 and 6.0volts. The output level voltage clamping circuit 3 will clamp thevoltage at the output voltage node 81 to about 3.3 volts when the outputvoltage is at the up level. The voltage at the output voltage node 81 isto be clamped at about 3.3 volts. If the output voltage node 81 isheavily loaded the load will tend to pull the voltage at the outputvoltage node 81 below 3.3 volts. The output load detection and feedbackcircuit 4 detects when loading at the output node 81 tends to pull thevoltage at the output node 81 below about 3.3 volts and brings thevoltage back up to about 3.3 volts.

An embodiment of the modified NOR circuit and the internal voltageclamping circuit, is shown in FIG. 2. The internal voltage clampingcircuit will clamp the voltage at the first node 80 to about 4.3 voltswhen the voltage at the output node 81 is at the up level. The modifiedNOR circuit comprises a first 41, second 42, third 43, and fourth 44 Pchannel metal oxide semiconductor field effect transistors, PMOS-FETs;and a sixth 56 and seventh 57 N channel metal oxide semiconductor fieldeffect transistors, NMOS-FETs. The drain of the first PMOS-FET 41 isconnected to the V_(cc) supply voltage of between about 4.0 volts and6.0 volts. The source of the first PMOS-FET 41 is connected to the drainof the second PMOS-FET 42. The source of the second PMOS-FET 42 isconnected to the drains of the third PMOS-FET 43 and fourth PMOS-FET 44.The sources of the third PMOS-FET 43 and the fourth PMOS-FET 44 areconnected to the first node 80, to the drains of the sixth NMOS-FET 56and seventh NMOS-FET 57, and to the gate of the first output NMOS-FET58. The inverse data signal is connected to the gates of the firstPMOS-FET 41, the sixth NMOS-FET 56, and to one of the inputs of a firstNOR circuit not shown in FIG. 2. The inverse clock signal is connectedto the gates of the second PMOS-FET 42, the seventh NMOS-FET 57, and toanother of the inputs of the first NOR circuit. The sources of the sixthNMOS-FET 56 and seventh NMOS-FET are connected to the ground node 95.

The internal voltage clamping circuit comprises a first NMOS-FET 51, asecond NMOS-FET 52, a third NMOS-FET 53, and fifth PMOS-FET 45. Thedrain and gate of the first NMOS-FET 51 are connected to the first node80. It is the voltage of this first node 80 which is to be clamped to avoltage of about 4.3 volts when the voltage of the output node 81 is atthe up level. The source of the first NMOS-FET 51 is connected to thedrain of the fifth PMOS-FET 45. The gate and source of the fifthPMOS-FET 45 and the gate and drain of the second NMOS-FET 52 are allconnected together. The source of the second NMOS-FET 52 is connected tothe gate and drain of the third NMOS-FET 53. The source of the thirdNMOS-FET 53 is connected to ground. The voltage between the first node80 and ground 95 is limited to the sum of the threshold voltages of thefirst NMOS-FET 51, the fifth NMOS-FET 45, the second NMOS-FET 52, andthe third NMOS-FET 53 since these FETs are connected in diode modebetween the first node 80 and ground 95. The voltage at the first node80 will be clamped to about 4.3 volts and will be independent offluctuations in the Vcc voltage level. The gate of the first outputNMOS-FET 58 is connected to the first node 80. The source of the firstoutput NMOS-FET 58 is connected to the drain of the second outputNMOS-FET 59 and to the output voltage node 81.

Refer now to FIG. 3, there is shown an embodiment of the output voltageclamping circuit for the voltage appearing at the output voltage node81. FIG. 3 shows a schematic diagram of the internal voltage clampingcircuit described in the immediately preceding embodiment and the outputvoltage clamping circuit, which will clamp the voltage at the outputvoltage node 81 to about 3.3 volts when the output voltage is at the uplevel. The output voltage clamping circuit comprises a sixth PMOS-FET46, a fourth NMOS-FET 54, and a fifth NMOS-FET 55. The drain of thesixth PMOS-FET 46 is connected to the output voltage node 81 and thegate of the sixth PMOS-FET 46 is connected to a third node 83. The thirdnode 83 is also connected to the gate and source of the fifth PMOS-FET45 and the gate and drain of the second NMOS-FET 52 of the internalvoltage clamping circuit. The source of the sixth PMOS-FET 46 isconnected to the gate and drain of the fourth NMOS-FET 54. The source ofthe fourth NMOS-FET 54 is connected to the drain of the fifth NMOS-FET55. The source of the fifth NMOS-FET 55 is connected to ground. The gateof the fifth NMOS-FET 55 is connected to the first node 80 and to thegate of the first output NMOS-FET 58. The source of the first outputNMOS-FET 58 is connected to the output node 81 and to the drain of thesecond output NMOS-FET 59. The source of the second output NMOS-FET 59is connected to ground. The second output NMOS-FET 59 does not affectthe voltage at the output voltage node 81 and the gate connection of thesecond output NMOS-FET 59 is not shown.

The source of the first NMOS-FET 51 of the internal voltage clampingcircuit and the drain of the fifth PMOS-FET 45 of the internal voltageclamping circuit are connected together at a second node 82. The voltageat the second node 82 is equal to the threshold voltage of the firstNMOS-FET 51 subtracted from the voltage at the first node 80 and is alsoequal to the voltage at the third node 83 added to the threshold voltageof the first PMOS-FET 45. The voltage at the output voltage node 81 isequal to the threshold voltage of the first output NMOS-FET 58subtracted from the voltage at the first node 80 and is also equal tothe voltage at the third node 83 added to the threshold voltage of thesixth PMOS-FET 46. Since the threshold voltages of the NMOS-FETs arenearly equal and the threshold voltages of the PMOS-FETs are nearlyequal the voltage at the second node 82 and the voltage at the outputvoltage node 81 are equal.

The voltage at the first node 80 is clamped to about 4.3 volts by theinternal voltage clamping circuit as described in the precedingembodiment. Since the first NMOS-FET 51 is connected in diode mode andthe NMOS-FET threshold voltage is about 1.0 volt s so the voltage at thesecond node 82 and the output voltage node 81 is about 3.3 volts, or thevoltage at the first node 80 minus about 1.0 volts. If the voltage atthe output voltage node 81 tends to increase above 3.3 volts the sixthPMOS-FET 46 turns on and the voltage at the output voltage node 81 ispulled back to 3.3 volts. If the voltage at the output voltage node 81tends to decrease below 3.3 volts the first output NMOS-FET 58 turns onand the voltage at the output voltage node 81 is pulled back to 3.3volts. In this manner the voltage at the output voltage node 81 isclamped to 3.3 volts.

Refer now to FIG. 4, there is shown an embodiment of the load detectionand feedback circuit. The embodiment comprises a NOR circuit 11, an NPNbipolar transistor 33, the output voltage clamping circuit described inthe immediately preceding embodiment, a first output NMOS-FET 58, and asecond output NMOS-FET 59. The NPN bipolar transistor is a parasitictransistor in an integrated circuit element having NMOS-FETs andPMOS-FETs. The NOR circuit 11 is part of the modified NOR gate shown inFIG. 2 and described earlier. The rest of the modified NOR gate does notaffect the operation of the load detection and feedback circuit and isnot shown here. The output of the NOR circuit 11 is connected to thebase of the NPN bipolar transistor 33. The collector of the NPN bipolartransistor 33 is connected to the V_(cc) voltage supply which is betweenabout 4.0 volts and 6.0 volts. The emitter of the NPN bipolar transistor33 is connected to the output voltage node 81. The source of the sixthPMOS-FET 46 of the output voltage clamping circuit, the drain of thefourth NMOS-FET 54 of the output voltage clamping circuit, and the gateof the fourth NMOS-FET 54 of the output voltage clamping circuit are allconnected to a fourth node 84. The fourth node 84 is then connected toone of the inputs of the NOR circuit 11 thereby providing feedback.

The voltage at the output voltage node 81 is clamped at 3.3 volts by theoutput voltage clamping circuit. If there is a transistor transistorlogic load, or any heavy load, at the output voltage node 81 the loadwill tend to pull the voltage at the output voltage node 81 below 3.3volts. If the voltage at the output voltage node 81 tends to fall below3.3 volts the current in the fourth NMOS-FET 54 of the output voltageclamping circuit becomes near zero and the voltage at the fourth node 84becomes low. When the voltage at the fourth node 84 becomes low theoutput of the NOR circuit 11 is high thereby turning the NPN bipolartransistor 33 on. When the NPN bipolar transistor 33 turns on thevoltage at the output voltage node 81 rises back toward 3.3 volts.

If the voltage at the output node 81 tends to rise above 3.3 volts theforth NMOS-FET 54 of the output voltage clamping circuit turns on andthe voltage at the fourth node 84 becomes high. When the voltage at thefourth node 84 becomes high the output of the NOR circuit 11 is lowthereby turning the NPN bipolar transistor 33 off. When the NPN bipolartransistor 33 turns off the voltage at the output voltage node 81 ispulled back down toward 3.3 volts. In this manner the voltage at theoutput voltage node 81 is kept at 3.3 volts over a wide range of loadingconditions.

Refer now to FIG. 5, there is shown the preferred embodiment of theoutput buffer circuit for CMOS integrated circuits. The output buffercircuit comprises the modified NOR gate, the internal voltage clampingcircuit, the output voltage clamping circuit, and the load detection andfeedback circuit of the previous embodiments.

As shown in FIG. 5, the first NOR circuit 11 is connected to the firstPMOS-FET 41, the second PMOS-FET 42, the third PMOS-FET 43, the fourthPMOS-FET 44, the sixth NMOS-FET 56, and the seventh NMOS-FET 57 to formthe modified NOR gate described earlier. The inverse data input of thefirst NOR circuit 11 is connected to the gate of the first PMOS-FET 41and the gate of the sixth NMOS-FET 56. The inverse clock input of thefirst NOR circuit 11 is connected to the gate of the second PMOS-FET 42and the gate of the seventh NMOS-FET 57.

The internal voltage clamping circuit, described earlier, comprises thefirst NMOS-FET 51, the fifth PMOS-FET 45, the second NMOS-FET 52, andthe third NMOS-FET 53 and is connected between the first node 80 and theground node 95. The output voltage clamping circuit, described earlier,comprises the sixth PMOS-FET 46, the fourth NMOS-FET 54, and the fifthNMOS-FET 55, and is connected between the output voltage node 81 and theground node 95. The gate of the fifth NMOS-FET 55 of the output voltageclamping circuit is connected to the first node. The gate of the fourthNMOS-FET 54 of the output voltage clamping circuit, the drain of thefourth NMOS-FET 54 of the output voltage clamping circuit, and thesource of the sixth PMOS-FET 46 of the output voltage clamping circuitare all connected to an input of the first NOR circuit 11. The gate ofthe sixth PMOS-FET 46 of the output voltage clamping circuit, the gateand source of the fifth PMOS-FET 45 of the internal voltage clampingcircuit, and the gate and drain of the second NMOS-FET 52 of theinternal voltage clamping circuit are all connected together at a thirdnode 83.

The output of the first NOR circuit 11 is connected to the base of theNPN transistor 33 of the output load detection and feedback circuit. Thecollector of the NPN transistor 33 is connected to the V_(cc) supplyvoltage of between about 4.0 and 6.0 volts. The emitter of the NPNtransistor 33 is connected to the output voltage node 81. The drain ofthe first output NMOS-FET 58 is connected to the V_(cc) supply voltage,the gate of the first output NMOS-FET 58 is connected to the first node80, and the source of the first output NMOS-FET 58 is connected to theoutput voltage node 81. The drain of the second output NMOS-FET 59 isconnected to the output voltage node 81, the gate of the second outputNMOS-FET 59 is connected to the output of the second NOR circuit 12, andthe source of the second output NMOS-FET 59 is connected to the groundnode 95.

The output of a NAND circuit 21, having two inputs and an output, isconnected to the input of a first inverter 34 and the output of thefirst inverter 34 is connected to the gate of the fourth PMOS-FET 44 ofthe modified NOR gate. The first input of the NAND circuit 21 isconnected to the high Vcc detection node 98. The first node 80 isconnected to the input of a second inverter 35. The output of the secondinverter 35 is connected to the gate of a tenth NMOS-FET 71. The drainof the tenth NMOS-FET 71 is connected to source of the first NMOS-FET 51of the internal voltage clamping circuit and to the second input of theNAND circuit 21 to provide circuit timing. The source of the tenthNMOS-FET 71 is connected to the ground node 95.

The circuit operation is as described in the previous embodiments. Theinternal voltage clamping circuit provides a voltage at the first node80 of about 4.3 volts, when the voltage at the output voltage node 81 isat the up level, over a wide range of V_(cc) supply voltage. The outputvoltage clamping circuit provides a voltage at the output node 81 ofabout 3.3 volts, when the voltage at the output voltage node 81 is atthe up level. The load detection and feedback circuit maintains avoltage at the output voltage node 81 of about 3.3 volts, when thevoltage at the output voltage node 81 is at the up level, over a widerange of loading conditions. The output buffer circuit of this inventionprovides a stable output voltage over a wide range of loading andvoltage supply conditions.

While the invention has been particularly shown and described withreference to the preferred embodiments thereof, it will be understood bythose skilled in the art that various changes in form and details may bemade without departing from the spirit and scope of the invention.

What is claimed is:
 1. An output voltage buffer circuit, comprising:aninternal voltage node; an output voltage node; a V_(cc) voltage supplynode; a ground node; a modified OR-INVERT gate having inputs and anoutput wherein said output of said modified OR-INVERT gate is connectedto said internal voltage node; a second OR-INVERT gate having inputs andan output; an internal voltage clamping circuit connected to saidinternal voltage node; an output voltage clamping circuit connected tosaid internal voltage node and said output voltage node; a loaddetection and feedback circuit connected to said output voltage clampingcircuit and said output voltage node; a first output metal oxidesemiconductor field effect transistor having a gate, a source, and adrain wherein said gate of said first output metal oxide field effecttransistor is connected to said internal voltage node, said source ofsaid first output metal oxide field effect transistor is connected tosaid output voltage node, and said drain of said first output metaloxide semiconductor field effect transistor is connected to said V_(cc)voltage supply node; and a second output metal oxide semiconductor fieldeffect transistor having a gate, a source, and a drain wherein saiddrain of said second output metal oxide field effect transistor isconnected to said output voltage node, said gate of said metal oxidefield effect transistor is connected to said output of said secondOR-INVERT gate, and said source of said second output metal oxidesemiconductor field effect transistor is connected to said ground node.2. The output voltage buffer circuit of claim 1 wherein said internalvoltage clamping circuit holds the voltage at said internal voltage nodeat about 4.3 volts when the voltage at said output voltage node is atthe up level.
 3. The output voltage buffer circuit of claim 1 whereinsaid output voltage clamping circuit holds the voltage at said outputvoltage node at about 3.3 volts when the voltage at said output voltagenode is at the up level.
 4. The output buffer circuit of claim 1 whereinsaid load detector and feedback circuit holds the voltage at said outputvoltage node at about 3.3 volts when the voltage at said output voltagenode is at the up level.
 5. The output buffer circuit of claim 1 whereinsaid the voltage at said V_(cc) voltage supply node is between about 4.0volts and 6.0 volts.
 6. The output buffer circuit of claim 1 whereinsaid internal voltage clamping circuit further comprises:a first node; asecond node; a third node; a first N channel metal oxide semiconductorfield effect transistor having a drain, a gate, and a source whereinsaid drain of said first N channel metal oxide semiconductor fieldeffect transistor is connected to said internal voltage node, said gateof said first N channel metal oxide semiconductor field effecttransistor is connected to said internal voltage node, and said sourceof said first N channel metal oxide semiconductor field effecttransistor is connected to said first node; a first P channel metaloxide semiconductor field effect transistor having a drain, a gate, anda source wherein said drain of said first P channel metal oxidesemiconductor field effect transistor is connected to said first node,said gate of said first P channel metal oxide semiconductor field effecttransistor is connected to said second node, and said source of saidfirst P channel metal oxide semiconductor field effect transistor isconnected to said second node; a second N channel metal oxidesemiconductor field effect transistor having a drain, a gate, and asource wherein said drain of said second N channel metal oxidesemiconductor field effect transistor is connected to said second node,said gate of said second N channel metal oxide semiconductor fieldeffect transistor is connected to said second node, and said source ofsaid second N channel metal oxide semiconductor field effect transistoris connected to said third node; and a third N channel metal oxidesemiconductor field effect transistor having a drain, a gate, and asource wherein said drain of said third N channel metal oxidesemiconductor field effect transistor is connected to said third node,said gate of said third N channel metal oxide semiconductor field effecttransistor is connected to said third node, and said source of saidthird N channel metal oxide semiconductor field effect transistor isconnected to said ground node.
 7. The output buffer circuit of claim 1wherein said output voltage clamping circuit further comprises:a fourthnode; a fifth node; a second P channel metal oxide semiconductor fieldeffect transistor having a drain, a gate, and a source wherein saiddrain of said second P channel metal oxide semiconductor field effecttransistor is connected to said output voltage node, said gate of saidsecond P channel metal oxide semiconductor field effect transistor isconnected to said internal voltage clamping circuit, and said source ofsaid second P channel metal oxide semiconductor field effect transistoris connected to said fourth node; a fourth N channel metal oxidesemiconductor field effect transistor having a drain, a gate, and asource wherein said drain of said fourth N channel metal oxidesemiconductor field effect transistor is connected to said fourth node,said gate of said fourth N channel metal oxide semiconductor fieldeffect transistor is connected to said fourth node, and said source ofsaid fourth N channel metal oxide semiconductor field effect transistoris connected to said fifth node; and a fifth N channel metal oxidesemiconductor field effect transistor having a drain, a gate, and asource wherein said drain of said fifth N channel metal oxidesemiconductor field effect transistor is connected to said fifth node,said gate of said fifth N channel metal oxide semiconductor field effecttransistor is connected to said internal voltage node, and said sourceof said fifth N channel metal oxide semiconductor field effecttransistor is connected to said ground node.
 8. The output buffercircuit of claim 1 wherein said load detection and feedback circuitfurther comprises:an NPN bipolar transistor having a collector, a base,and an emitter wherein said collector of said NPN bipolar transistor isconnected to said V_(cc) voltage supply node, said emitter of said NPNbipolar transistor is connected to said output voltage node, and saidbase of said NPN bipolar transistor is connected to said output of saidmodified OR-INVERT gate; and a connection between one of said inputs ofsaid modified OR-INVERT gate and said output voltage clamping circuit.9. The output buffer circuit of claim 8 wherein said NPN bipolartransistor is a parasitic transistor in an integrated circuit elementcontaining metal oxide semiconductor field effect transistors.
 10. Theoutput buffer circuit of claim 1 wherein said internal voltage clampingcircuit, said output voltage clamping circuit, and said load detectionand feedback circuit are contained in a single integrated circuitelement.